• 专利标题:   Manufacturing method of coating quantum dot of graphene on solar cell increases carrier concentration of the solar cell so as to further increase photoelectric conversion efficiency of the solar cell.
  • 专利号:   TW201742262-A
  • 发明人:   SHEN Z, LIN Z
  • 专利权人:   UNIV CHUNG YUAN CHRISTIAN
  • 国际专利分类:   B82Y010/00, H01L031/036, H01L031/18
  • 专利详细信息:   TW201742262-A 01 Dec 2017 H01L-031/18 201817 Pages: 0 Chinese
  • 申请详细信息:   TW201742262-A TW115436 19 May 2016
  • 优先权号:   TW115436

▎ 摘  要

NOVELTY - A disclosure is a manufacturing method of coating quantum dot of graphene on solar cell comprising steps of uniformly mixing a graphene and an alcohol solution into a sample, and carrying out treatment procedures, such as laser ablation, centrifugal purification and molecular sieving filtration, on the sample to obtain a graphene quantum dot solution, afterward utilizing drop coating manner to drop the graphene quantum dot solution over the surface of a solar cell, setting it for several minutes to evaporate alcohol solution, and then forming a graphene quantum dot coating layer on the surface of the solar cell. Accordingly, photoinduced carrier produced by the graphene quantum dot coating layer due to irradiation of sunlight can be transferred to the solar cell to increase carrier concentration of the solar cell so as to further increase photoelectric conversion efficiency of the solar cell.