▎ 摘　　要

NOVELTY - A p-type semiconductor device consists of a substrate, an electrode (e1) and an electrode (e2), a semiconductor layer in contact with both the electrode (e1) and the electrode (e2), an insulating layer (i) in contact with the semiconductor layer, an electrode (e3) in contact with the insulating layer on the side opposite to the insulating layer with respect to the semiconductor layer, and an insulating layer (ii) in contact with the semiconductor layer on the side opposite to the insulating layer with respect to the semiconductor layer. The semiconductor layer contains carbon nanotubes or graphene. The insulating layer (ii) comprises (A) (a) an inorganic compound or metal complex and (b) a polymer, and (B) a polymer containing a residue of a metal complex excluding a portion of an atom in the structure of the compound (a). USE - P-type semiconductor device such as complementary semiconductor device used for wireless communication device and thin film transistor array (all claimed) for electronic product such as display, sensor and drive circuit in integrated chips. ADVANTAGE - The p-type semiconductor device is capable of achieving both high on-current and low off-current, and has improved reliability. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: a complementary semiconductor device, which comprises the p-type semiconductor device and an n-type semiconductor element; manufacture of p-type semiconductor device, which involves forming the insulating layer (ii) comprising the compound (a), applying a composition comprising compounds (a), (b) a polymer and a solvent, and a composition containing the solvent and the polymer and drying the applied composition; and a wireless communication device, which consists of at least the p-type semiconductor device and an antenna.