• 专利标题:   Preparing graphene comprises synthesizing graphene on transition metal substrate, performing vapor deposition of hafnium on graphene, and annealing to form hafnium intercalated layer between graphene and metal substrate.
  • 专利号:   CN102976313-A, CN102976313-B
  • 发明人:   GAO H, LI L, WANG Y
  • 专利权人:   CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   B82Y040/00, C01B031/04
  • 专利详细信息:   CN102976313-A 20 Mar 2013 C01B-031/04 201356 Pages: 10 Chinese
  • 申请详细信息:   CN102976313-A CN10424654 30 Oct 2012
  • 优先权号:   CN10424654

▎ 摘  要

NOVELTY - Preparing graphene comprises (i) synthesizing graphene on a transition metal substrate in a vacuum environment; (ii) performing vapor deposition of specific amount of hafnium on graphene; and (iii) carrying out annealing so that hafnium covered on the surface of graphene is intercalated between graphene and the transition metal substrate to form a hafnium intercalated layer. USE - The method is useful for preparing graphene (claimed). ADVANTAGE - The graphene shows Raman spectrum line, G peak and 2D peak of typical quasi-free state graphene, and thus interaction between graphene and the metal substrate can be shielded; and exhibits intrinsic electronic properties.