• 专利标题:   Method for operating high frequency oscillator circuit, involves biasing graphene channel through gate electrode into negative differential resistance region of operation to generate frequency signal having resonant frequency.
  • 专利号:   US2014022025-A1, US8816787-B2
  • 发明人:   JENKINS K A, LIN Y
  • 专利权人:   INT BUSINESS MACHINES CORP
  • 国际专利分类:   H03B005/30, H03B005/12, H03B007/06
  • 专利详细信息:   US2014022025-A1 23 Jan 2014 H03B-005/30 201409 Pages: 8 English
  • 申请详细信息:   US2014022025-A1 US551708 18 Jul 2012
  • 优先权号:   US551708

▎ 摘  要

NOVELTY - The method involves providing an oscillator comprising of a FET (100) connected with a resonant circuit. The FET is provided with a gate electrode (20) coupled to a source of gate voltage, a source electrode (14), a drain electrode (16) and a graphene channel (12) positioned between the source electrode and the drain electrode and electrically connected to the FET. The graphene channel is biased through the gate electrode into a negative differential resistance region of operation to cause the oscillator to generate a frequency signal having a resonant frequency. USE - Method for operating high frequency oscillator circuit. ADVANTAGE - The gate voltage can be varied to bias the graphene channel into negative differential resistance region of operation and out of the negative differential resistance region of operation to effectively turn on the frequency signal and to turn off the frequency signal, respectively. The efficient generation and detection of terahertz radiation can be achieved. The terahertz signal source can be compact, low-power and portable. The leakage of high frequency signals into the power supply loop can be prevented. DESCRIPTION OF DRAWING(S) - The drawing shows ano?=enlarged cross-sectional view of the graphene FET with top-gate configuration. Graphene channel (12) Source electrode (14) Drain electrode (16) Gate electrode (20) FET (100)