• 专利标题:   Method for fabricating graphene capacitor for e.g. supercapacitor device, involves depositing graphene ink composition on substrate, and coupling electrolyte and metallic lead components to electrode component to provide capacitor.
  • 专利号:   US2018010260-A1, WO2018013555-A2, WO2018013555-A3, WO2018013555-A9
  • 发明人:   HERSAM M C, SECOR E B, LI L
  • 专利权人:   HERSAM M C, SECOR E B, LI L, UNIV NORTHWESTERN
  • 国际专利分类:   C25D013/02, H01G011/32, H01G011/86
  • 专利详细信息:   US2018010260-A1 11 Jan 2018 C25D-013/02 201808 Pages: 48 English
  • 申请详细信息:   US2018010260-A1 US646761 11 Jul 2017
  • 优先权号:   US360727P, US646761

▎ 摘  要

NOVELTY - The method involves providing a graphene ink composition comprising graphene and an ethyl cellulose, where the composition is not prepared from graphene oxide. The graphene ink composition is deposited on a substrate, where deposition comprises inkjet printing to provide a micro-super capacitor (SC). The graphene composition is annealed to decompose ethyl cellulose and to provide an electrode component comprising graphene. Electrolyte and metallic lead components are coupled to the electrode component to provide a graphene capacitor. USE - Method for fabricating a graphene capacitor for SC device and a microSC device (all claimed) for use in printed and portable electronic device. ADVANTAGE - The method enables performing economical and efficient capacitor fabricating mechanism for preparation of pristine graphene solutions, dispersions and related graphene ink compositions using low-cost organic solvents for a range of end-use applications. The method enables utilizing a binder-free electrode to mitigate need for a separate current collector, thus simplifying device fabrication process, and eliminating potentially weak interfaces. The method enables providing space between the electrodes during capacitance calculation, thus reflecting intrinsic performance of a graphene electrode, fabrication tolerance and resolution in an efficient manner. The method enables exhibiting high volumetric capacitance, promising energy and power densities, excellent cycling stability and mechanical durability, long operational lifespan, straightforward packaging without liquid components and versatile form factor compatible with thin-film electronic systems. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a sandwich-structured SC fabrication structure.