▎ 摘　　要

NOVELTY - The photodetector has an insulating layer that is formed on a substrate (10). A graphene layer (20) is formed to extend from the substrate to the insulating layer. A source electrode (40) is formed on the insulating layer at one end of the extended graphene layer. A drain electrode (50) is formed on the substrate. A gate insulating layer is formed on the graphene layer. A gate electrode (60) is formed on the gate insulating layer and includes light transmittance. The drain electrode is physically separated from the graphene layer and is formed in a direction perpendicular to a direction in which the source electrode is connected to the graphene layer. USE - Graphene-semiconductor hetero-junction photodetector for performing photodetection function in high illuminance environment. ADVANTAGE - The photodetector adjusts gain according to an applied gate voltage and improves photodetection efficiency by decreasing a dark current. The photoresponsivity is improved or the photoresponsivity is controlled. The probability that the holes generated in the substrate move to the graphene layer is reduced due to the increase in the Fermi level. The dark current decreases by inserting the intermediate layer between the substrate and the graphene layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing graphene-semiconductor hetero-junction photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a photodetector. Substrate (10) Graphene layer (20) Source electrode (40) Drain electrode (50) Gate electrode (60)