• 专利标题:   Method for manufacturing silver nano-meter wire/graphene composite film, involves etching growth substrate to attach PMMA film layer with graphene film, and using target substrate to form silver nano-meter wire/graphene composite film.
  • 专利号:   CN111091931-A
  • 发明人:   CHEN S, XU Y, WU D, ZHAO K
  • 专利权人:   UNIV JINGCHU TECHNOLOGY
  • 国际专利分类:   H01B013/00
  • 专利详细信息:   CN111091931-A 01 May 2020 H01B-013/00 202041 Pages: 18 Chinese
  • 申请详细信息:   CN111091931-A CN11353193 25 Dec 2019
  • 优先权号:   CN11353193

▎ 摘  要

NOVELTY - The method involves manufacturing a graphene film to provide a growing substrate. The growing substrate is put in a middle of a tubular furnace. Hydrogen flow is controlled to keep a pressure constant in the tubular furnace. The hydrogen and methane are fully mixed with the growing substrate. The growth substrate of a single-layer graphene film is removed from the tubular furnace. A graphene film of a surface spin is coated according to layer of PMMA film layer. The growth substrate is etched to attach the PMMA film layer with the graphene film. A target substrate is used to form silver nano-meter wire/graphene composite film. USE - Method for manufacturing silver nano-meter wire/graphene composite film. ADVANTAGE - The method enables effectively reducing process flow and reducing manufacturing cost of the material, and realizing large-scale industrial production. DESCRIPTION OF DRAWING(S) - The drawing shows a photograph view of a method for manufacturing silver nano-meter wire/graphene composite film.