▎ 摘　　要

NOVELTY - The battery has a semiconductor conversion layer (2) and a graphene upper electrode (3) that are sequentially formed above the substrate (1), and a metal lower electrode (4) is formed below the substrate. The thickness of the graphene upper electrode is 1-100 nm. The material of the semiconductor conversion layer is selected silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), and diamond. The material of the metal bottom electrode is selected from titanium (Ti), aluminum (Al), and gold (Au). The contact type of the metal lower electrode is ohmic contact. USE - Semiconductor radiation battery. ADVANTAGE - The characteristics of graphene small atomic number is utilized to break through the shortcomings of the lower conversion efficiency of the battery caused by the deposition of the metal upper electrode on the Beta particles in the traditional Beta radiation battery to achieve a Beta electron high transmittance electrode and combined with the high carrier mobility of graphene to enhance the separation of electron-hole pairs generated by radiation, improve the conversion efficiency of the battery, and realize a high-efficiency semiconductor radiation battery. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the PN-type semiconductor radiation battery. Substrate (1) Semiconductor conversion layer (2) Graphene upper electrode (3) Metal lower electrode (4)