▎ 摘　　要

NOVELTY - Preparing two-dimensional single crystal material lamination with large size and interlayer corner comprises providing a single crystal substrate lamination with a certain interlayer corner; the single crystal substrate stack comprises a first single crystal substrate and a second single crystal substrate laminated, rotating a certain angle relative to the first single crystal substrate relative to the second single crystal substrate so that the first crystal orientation of the first single crystal substrate and the second crystal orientation of the second single crystal substrate have an interlayer angle, growing a two-dimensional single crystal material on the opposite surface respectively the two single crystal substrates in the single crystal substrate lamination, adding the single crystal substrate stack into the chemical vapor deposition device, introducing inert gas and reducing gas, start heating and bonding. USE - The method is useful for preparing two-dimensional single crystal material lamination with large size and interlayer corner. ADVANTAGE - The method solves the problem that the interface is not clean when preparing corner two-dimensional lamination, small laminated size, complex operation and so on, realizes the fast preparation of the large size two-dimensional single crystal lamination with controllable angle. DETAILED DESCRIPTION - Preparing two-dimensional single crystal material lamination with large size and interlayer corner comprises (1) providing a single crystal substrate lamination with a certain interlayer corner; the single crystal substrate stack comprises a first single crystal substrate and a second single crystal substrate laminated, the first single crystal substrate is located below the second single crystal substrate, rotating a certain angle relative to the first single crystal substrate relative to the second single crystal substrate so that the first crystal orientation of the first single crystal substrate and the second crystal orientation of the second single crystal substrate have an interlayer angle, the first crystal orientation and the second crystal orientation are the same crystal orientation, (2) growing a two-dimensional single crystal material on the opposite surface respectively the two single crystal substrates in the single crystal substrate lamination, adding the single crystal substrate stack into the chemical vapor deposition device, introducing inert gas and reducing gas, start heating, raising the temperature to 700-1100 degrees C, introducing the needed gas source or heating growth needed solid source, the growth time is 1 second to 48 hours, growing a first two-dimensional single crystal material on the upper surface of the first single crystal substrate after the growth is finished, growing a second two-dimensional single crystal material on the lower surface of the second single crystal substrate, so that the first two-dimensional single crystal material with respect to the second two-dimensional single crystal material also has the interlayer angle, (3) bonding the first two-dimensional single crystal material and the second two-dimensional single crystal material, (4) removing the second single crystal substrate, namely finishing the preparation of the two dimensional single crystal material lamination with large size with interlayer corner.