• 专利标题:   Fabricating graphene, comprises depositing graphene seed layer on substrate of base layer, depositing catalyst metal layer on substrate and graphene seed layer and introducing carbon atom to graphene seed layer.
  • 专利号:   US2013287956-A1, US8932673-B2
  • 发明人:   PATIL V
  • 专利权人:   PATIL V, PATIL V
  • 国际专利分类:   B05D001/36, B05D003/10, C01B031/04, C23C016/00
  • 专利详细信息:   US2013287956-A1 31 Oct 2013 B05D-001/36 201376 Pages: 19 English
  • 申请详细信息:   US2013287956-A1 US456894 26 Apr 2012
  • 优先权号:   US456894

▎ 摘  要

NOVELTY - Fabricating graphene (54), comprises providing a base layer comprising a substrate (22); depositing a graphene seed layer on the substrate; depositing a catalyst metal layer (31) on the substrate and the graphene seed layer or depositing a catalyst metal layer that is separate from the substrate and the graphene seed layer; and introducing carbon atom to the graphene seed layer. USE - The method is useful for fabricating graphene. ADVANTAGE - The method: provides fabrication of large-area, high quality uniform graphene with electrical, mechanical and optical properties comparable to mechanically exfoliated graphene, where the graphene has field effect mobility of 4000 cm2/Vs up to and greater than 15000 cm2/Vs, optional transmission greater than 90% and Raman spectra with G and 2D bands at 1580 cm-1 and 2700 cm-1 respectively; involves placement of a seed of high-quality graphene on a desired to substrate to begin the deposition process. DESCRIPTION OF DRAWING(S) - The figure illustrates cross sectional view of substrate with newly formed large-area, high-quality graphene underneath the catalyst metal layer and a clean top surface of the catalyst metal layer after etching of the top layer of graphene occurs. Substrate (22) Catalyst metal layer (31) Bottom surface (32) Top surface (33) Large area, high quality graphene (54)