▎ 摘　　要

NOVELTY - The preparation of FET based on narrow graphene nano-belt comprises preparing graphene nano-belt on a substrate with an oxide grid medium, forming a metal layer of a source electrode and a drain electrode at two ends of the graphene nano-belt, obtaining a back grid structure with the substrate as a grid, where the width of the nano-band is 1-5 nm. The substrate is a silicon chip, the oxide grid medium is the silicon oxide layer obtained by thermally oxidizing and growing on the silicon chip. USE - Preparation method of FET based on narrow graphene nano-belt (claimed) used in active matrix display and logic circuit. Can also be used in integrated circuit (IC). ADVANTAGE - The prepared graphene nano-belt has a very narrow width so that belt has a large band gap, so that the prepared FET has high switch ratio, at the same time, the prepared graphene nano-belt has smooth edge to make the prepared FET have high field effect mobility. The preparation method uses microwave heating, transition metal auxiliary hydrogen for melting the single-wall carbon nanotubes, and controls the amount of hydrogen when melting and chain time, so as to form narrow graphene nanotubes with width of 1-5 nm. The needed melting temperature is far lower than the temperature of the tubular furnace pyrolysis chain, and reducing the requirement of the device.