▎ 摘　　要

NOVELTY - The method involves preparing graphene oxide. A substrate is cleaned. The substrate is wetted. The substrate is coated with the graphene oxide for forming a coating film. A reduction film is formed on the substrate from the graphene oxide in an oven at temperature of 150-220 degree Celsius for 20-45 minutes. Contacts are deposited on the substrate. The graphene oxide is mixed with hydrochloric acid solution. The graphene oxide is retained in a filter, where the graphene oxide is washed with distilled water. USE - Method for obtaining reduced graphene oxide-coated substrates i.e. graphene oxide-coated p-type silicon wafer (claimed). ADVANTAGE - The method enables obtaining the graphene oxide-coated substrates in a cost-effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a device for obtaining reduced graphene oxide-coated substrates.