• 专利标题:   Preparing nano-gap mechanically controllable single layer graphene single molecular junction comprises taking single molecule junction is made of an elastic thin copper sheet, a silicon dioxide insulating layer.
  • 专利号:   CN107265396-A
  • 发明人:   XIANG D, NI L, ZHANG W, GUO C, WANG L, ZHAO Z, ZHANG T
  • 专利权人:   UNIV NANKAI
  • 国际专利分类:   B81C001/00
  • 专利详细信息:   CN107265396-A 20 Oct 2017 B81C-001/00 201783 Pages: 9 Chinese
  • 申请详细信息:   CN107265396-A CN10360918 13 May 2017
  • 优先权号:   CN10360918

▎ 摘  要

NOVELTY - Preparing nano-gap mechanically controllable single layer graphene single molecular junction comprises taking single molecule junction is made of an elastic thin copper sheet, a silicon dioxide insulating layer, single layer graphene electrode pair, gold covering layer and three-point bending device, using elastic copper sheet as an insulating layer for generating silicon dioxide film, bending the formed silicon dioxide/copper substrate and the silicon dioxide film can planarize the surface to facilitate the transfer of monolayer graphene onto the silicon dioxide/copper substrate. USE - The method is useful for preparing nano-gap mechanically controllable single layer graphene single molecular junction (claimed). ADVANTAGE - The method has significance in the development of molecular electronics. DETAILED DESCRIPTION - Preparing nano-gap mechanically controllable single layer graphene single molecular junction comprises taking single molecule junction is made of an elastic thin copper sheet, a silicon dioxide insulating layer, single layer graphene electrode pair, gold covering layer and three-point bending device, using elastic copper sheet as an insulating layer for generating silicon dioxide film, bending the formed silicon dioxide/copper substrate, the silicon dioxide film can planarize the surface to facilitate the transfer of monolayer graphene onto the silicon dioxide/copper substrate, using the gold coating to fix single-layer graphene, using the wet etching as the middle part to have groove, providing suspended nano-bridge and using the three-point bending device to bend chip and accurately controlling nano-gap size.