• 专利标题:   Graphene dynamic impedance continuously adjustable two-dimensional semiconductor coaxial feed structure, has shaft core arranged with shell layer, where continuous voltage is applied between shaft core and outer shell layer.
  • 专利号:   CN108258419-A, CN207705391-U
  • 发明人:   QIAN Z, ZHANG W, ZHANG X, GUI C, SHU G
  • 专利权人:   UNIV SHENZHEN
  • 国际专利分类:   H01P001/202, H01Q001/50, H01Q021/00
  • 专利详细信息:   CN108258419-A 06 Jul 2018 H01Q-001/50 201851 Pages: 7 Chinese
  • 申请详细信息:   CN108258419-A CN10086881 30 Jan 2018
  • 优先权号:   CN10086881, CN20141439

▎ 摘  要

NOVELTY - The structure has a main body arranged with a molybdenum disulfide layer. A filling layer is arranged between a graphene layer and the molybdenum disulfide layer. The main body is provided with a shaft core. The shaft core is arranged with a shell layer. The filling layer is arranged with an outer shell layer and the molybdenum disulfide layer, where continuous voltage is applied between the shaft core and the outer shell layer. The shaft core is filled with dielectric material. A copper film substrate is arranged with the graphene layer. USE - Graphene dynamic impedance continuously adjustable two-dimensional semiconductor coaxial feed structure. ADVANTAGE - The structure adjusts radio frequency impedance. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene dynamic impedance continuously adjustable two-dimensional semiconductor coaxial feed structure.