▎ 摘　　要

NOVELTY - The method involves forming source and drain metal layer on a graphene semiconductor layer, and forming a laminated structure on a base plate. The laminated structure is used to carry out a quadratic patterning process. A graphene semiconductor active layer is formed, and a source-drain metal pattern layer is formed on a relative area between a source electrode and a drain electrode. The source and drain metal layer is composed of copper or copper-containing alloy. A doping element of the semiconductor layer is composed of hydrogen, fluorin, nitrogen, oxygen, boron and bromine. USE - Method for preparation of a thin film transistor of an array substrate for a display device (all claimed). ADVANTAGE - The method enables preventing the graphene semiconductor layer from being polluted and improving electrical performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a display device comprising an array substrate DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for preparation of a thin film transistor of an array substrate. '(Drawing includes non-English language text)'