• 专利标题:   Graphene structure for use in semiconductor device, comprises substrate, graphene on surface of substrate, and bonding region, where material of substrate and carbon of the graphene are covalently bonded, between surface of substrate and graphene, where bonding region has silicon carbide.
  • 专利号:   US2023207312-A1
  • 发明人:   JUNG A, LEE C, SHIN K, KIM C, SHIN H, SONG H, BYUN K, LEE E
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L021/02, H01L029/16, H01L029/165
  • 专利详细信息:   US2023207312-A1 29 Jun 2023 H01L-021/02 202355 English
  • 申请详细信息:   US2023207312-A1 US179565 07 Mar 2023
  • 优先权号:   KR050720

▎ 摘  要

NOVELTY - Graphene structure comprises a substrate, graphene on a surface of the substrate, and a bonding region, where a material of the substrate (110) and carbon of the graphene are covalently bonded, between the surface of the substrate and the graphene, where the bonding region (120) has a 40-60 wt.% silicon carbide. USE - Graphene structure for use in a semiconductor device. ADVANTAGE - The graphene has high electric mobility and excellent thermal characteristics compared to silicon, chemical stability and wide surface area, improves adhesion between graphene and a substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the metal layer deposited on a top surface of a graphene layer. 110Substrate 120Bonding region 130Graphene layer 140Metal layer