▎ 摘　　要

NOVELTY - The device (100A) has a first insulating layer (211), a second insulating layer (212) and a third insulating layer (213) that are arranged on a substrate (101). A first interconnection structure (230) is provided with a first via (231) and a first interconnection layer (232). The first interconnection layer is connected with the first via and protruded upward from an upper surface of the second insulating layer in direction. A second interconnection structure (240) is provided with a second via (241) and a second interconnection layer (242). The second interconnection layer is connected to the second via, where a conductive layer of the first interconnection structure is contained with aluminum, ruthenium or molybdenum and a liner layer (235) of the first interconnection structure is contained with aluminum oxide, aluminum nitride, titanium oxide, silicon oxycarbide, graphene, molybdenum sulfide, tantalum sulfide or tantalum silicon. USE - Semiconductor device. ADVANTAGE - The device improves first interconnection structure and second interconnection structure electrical characteristics and performance of a device main body, reduces first interconnection structure and second interconnection structure resistance, first interconnection layer and second interconnection layer capacitance, size of the first interconnection layer and width of a first through-hole in the direction towards the substrate, forms a second through-hole in the first insulating layer and increases reliability of a transistor by reducing parasitic capacitance. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device. Semiconductor device (100A) Substrate (101) First insulating layer (211) Second insulating layer (212) Third insulating layer (213) First interconnection structure (230) First via (231) First interconnection layer (232) Liner layer (235) Second interconnection structure (240) Second via (241) Second interconnection layer (242)