▎ 摘　　要

NOVELTY - Preparing carbon-based device comprises e.g. (i) transferring multilayer graphene film synthesized by chemical vapor deposition, or mechanically stripping multilayer graphene or graphite film to surface of substrate, and placing analytical pure liquid bromine together with transferred multilayer graphene or graphite film in closed container, (ii) coating photoresist on surface of multilayer graphene or graphite film, developing channel area by photolithography, depositing metal layer, placing in dilute hydrochloric acid solution, removing carbon atoms in each layer of multilayer graphene film in channel region, using photoresist as mask, and performing hydrogen plasma etching to remove graphene layer containing large number of defects, and (iii) coating photoresist on surface of multi-layer graphene or graphite film, using photolithography and development to image electrode area, using plasma etching to form source and draining electrodes of multilayer graphene. USE - The method is useful for preparing carbon-based device. ADVANTAGE - The method: improves conductivity of the material, and conductivity of the material; greatly reduces contact of the device and the patch resistor; does not need other material, so as to simplify the process in the production process; and is compatible with the current semiconductor processing technique. DETAILED DESCRIPTION - Preparing carbon-based device comprises e.g. (i) transferring multilayer graphene film synthesized by chemical vapor deposition, or mechanically stripping multilayer graphene or graphite film to surface of substrate by dry or wet transfer method, placing analytical pure liquid bromine together with transferred multilayer graphene or graphite film in a closed container, exposing multilayer graphene or graphite film to bromine vapor atmosphere, and allowing to stand for a long time to form a bromine intercalation layer, (ii) coating photoresist on surface of multilayer graphene or graphite film after bromine intercalation treatment, developing channel area by photolithography, depositing metal layer by sputtering, placing in acetone solution to strip off metal outside channel area, finally placing in dilute hydrochloric acid solution, removing carbon atoms in each layer of multilayer graphene film in channel region, repeating process until channel region is as thin as one or two layers of graphene film, or coating photoresist on surface of multilayer graphene or graphite film in channel area, using photoresist as mask, performing mild oxygen plasma etching to generate a large number of vacancy defects, performing hydrogen plasma etching to remove the graphene layer containing a large number of defects, repeating the process until channel area is as thin as one or two graphene films, and removing the photoresist mask with an acetone solution, and (iii) coating photoresist on surface of multi-layer graphene or graphite film after bromine intercalation treatment, using photolithography and development to image electrode area, using plasma etching to form source and draining electrodes of multilayer graphene. An INDEPENDENT CLAIM is also included for preparing a circuit structure based on carbon-based device.