▎ 摘　　要

NOVELTY - Preparation of copper-tungsten alloy doped graphene comprises ultrasonically cleaning tungsten powder in sodium hydroxide solution to remove surface oil, washing with deionized water, cleaning with hydrochloric acid solution, washing with deionized water, modified surface in polyvinylpyrrolidone solution to form layer of copper nucleation sites on the surface of tungsten powder, washing, placing the pretreated tungsten powder in plating bath of electroless copper plating, heating, stirring to deposit copper atoms on tungsten powder to obtain copper-tungsten powder, placing copper-tungsten powder in surfactant polyvinyl alcohol solution for surface treatment, filtering, washing, re-dispersing in water to obtain polyvinyl alcohol-modified copper-tungsten suspension, placing graphene in surfactant polyvinylpyrrolidone solution for surface treatment, filtering, washing and re-dispersing in water to obtain graphene solution. USE - Method for preparing copper-tungsten alloy doped graphene. ADVANTAGE - The product has improved wettability of sintering process and mechanical, electrical and thermal properties, long service life and more uniform ablation.