▎ 摘　　要

NOVELTY - Preparing wafer level, high quality boron nitride/graphene heterojunction film comprises preparing continuous hexagonal boron nitride film on metal surface through surface catalytic growth method; removing hexagonal boron nitride film on one side surface of metal foil through plasma etching technology; folding metal foil into bag-shaped for sealing, where inner surface of sealing bag is grown with boron nitride film, and outer surface of boron nitride film; placing metal bag in tubular furnace, raising to certain temperature and introducing high-concentration carbon-containing gas, realizing diffusion of carbon atoms from outer surface to inner surface, slowly cooling, slowly separating carbon atom, and generating graphene on metal and hexagonal boron nitride interface; and cutting metal bag and spreading by wet transfer, bubbling transfer or dry transfer method to obtain hexagonal boron nitride/graphene vertical heterojunction film on target substrate surface. USE - Method for preparing wafer level and high quality boron nitride/graphene heterojunction film. ADVANTAGE - The method has high applicability and wide technique parameter window. It effectively avoids doping phenomenon between atoms, and obtains wafer level, vertical boron nitride/graphene heterojunction film with high quality. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the growth process of wafer level and high quality boron nitride/graphene heterojunction film (Drawing includes non-English language text).