▎ 摘　　要

NOVELTY - The memory cell (010) has multiple first elements (501) and multiple second elements (511) that are provided on a substrate (001). The first and second elements includes a gate electrode, a source electrode, a drain electrode and a gate insulating layer (201). One of source or drain electrodes of the first element is connected to one of the source or drain electrodes of the second element. The first element and the second element include a semiconductor layer (401,411) in contact with both the source electrode and the drain electrode. The electrical characteristics of the first element and the electrical characteristics of the second element are different from each other. The semiconductor layer comprises semiconductor materials selected from organic semiconductor materials, carbon nanotube, carbon nanocoil, fullerene, graphene and nanodiamond. A second insulating layer contains an electron donating compound selected from phosphorus atoms, arsenic atoms and nitrogen atoms. USE - Memory cell for use in semiconductor memory device of semiconductor device, radio communication apparatus, sensor control apparatus and flexible device (all claimed). ADVANTAGE - The memory cell comprises a base material and multiple elements that are provided on the base material, and thus enables reducing the consumption current while maintaining or improving a circuit operation speed in a simple circuit configuration, and stable output is possible. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: a semiconductor memory device; a wireless communication apparatus; a sensor control device; and a method for manufacturing memory cell. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the memory cell. 001Substrate 010Memory cell 201Gate insulating layer 410,411Semiconductor layers 501First element 511Second elements