▎ 摘　　要

NOVELTY - A semi-insulating silicon carbide wafer surface is cleaned and dried. The boron ion is implanted on semi-insulating silicon carbide wafer surface, and semi-insulating silicon carbide wafer is placed in growth furnace under protective atmosphere and thermally annealed. The semi-insulating silicon carbide wafer is thermally decomposed, to obtain semi-insulating silicon carbide wafer surface. Graphene PN junction is provided to semi-insulating silicon carbide wafer. The semi-insulating silicon carbide wafer surface has resistivity of more than 105 Omega .cm. USE - Epitaxial growth of graphene PN junction on semi-insulating silicon carbide wafer surface used for graphene bipolar device and multipolar device. ADVANTAGE - The method enables epitaxial growth of graphene PN junction on semi-insulating silicon carbide wafer surface with high yield by simple and stable method. DETAILED DESCRIPTION - A semi-insulating silicon carbide wafer surface is cleaned and dried. The boron ion is implanted on semi-insulating silicon carbide wafer surface, and semi-insulating silicon carbide wafer is placed in growth furnace under protective atmosphere and thermally annealed. The semi-insulating silicon carbide wafer is thermally decomposed, to obtain semi-insulating silicon carbide wafer surface. Graphene PN junction is provided to semi-insulating silicon carbide wafer. The crystalline form of semi-insulating silicon carbide wafer surface comprises 4H or 6H crystals. The semi-insulating silicon carbide wafer surface has resistivity of more than 105 Omega .cm.