• 专利标题:   Method for manufacturing graphene LED chip, involves arranging N-type semiconductor layer with P-type semiconductor layer, and fixing graphene transparent lower electrode with graphene transparent upper electrode.
  • 专利号:   CN105449067-A, CN105449067-B
  • 发明人:   BAI D
  • 专利权人:   BAI D, BAI D
  • 国际专利分类:   H01L033/00, H01L033/02, H01L033/04, H01L033/36, H01L033/40
  • 专利详细信息:   CN105449067-A 30 Mar 2016 H01L-033/36 201636 Pages: 16 English
  • 申请详细信息:   CN105449067-A CN11031700 31 Dec 2015
  • 优先权号:   CN11031700

▎ 摘  要

NOVELTY - The method involves filling a base plate (10) with vitriol aqueous solution. Graphene thin film drying process is performed. A graphene thin film is fixed to a graphene transparent lower electrode (21). Nano graphene preparing process is performed. A microscope is arranged with a lattice structure (30). The graphene transparent lower electrode and the base plate are arranged with the lattice structure. An N-type semiconductor layer (32) is arranged with a P-type semiconductor layer (31). The graphene transparent lower electrode is fixed with a graphene transparent upper electrode (22). USE - Method for manufacturing a graphene LED chip (claimed). ADVANTAGE - The method enables realizing graphene LED chip manufacturing process in a simple and convenient manner and improving light transmission rate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene LED chip. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a graphene LED chip. Base plate (10) Graphene transparent lower electrode (21) Graphene transparent upper electrode (22) Lattice structure (30) P-type semiconductor layer (31) N-type semiconductor layer (32)