• 专利标题:   Two-dimensional van der-waals hetero-structure based single-molecule field effect transistor, has two-dimensional material gate electrode layer, and insulating two-dimensional material dielectric layer.
  • 专利号:   CN112582542-A, CN112582542-B
  • 发明人:   GUO X, LI P, JIA C, CHANG X
  • 专利权人:   UNIV NANKAI
  • 国际专利分类:   H01L051/05, H01L051/30, H01L051/40
  • 专利详细信息:   CN112582542-A 30 Mar 2021 H01L-051/05 202138 Pages: 11 Chinese
  • 申请详细信息:   CN112582542-A CN11410961 06 Dec 2020
  • 优先权号:   CN11410961

▎ 摘  要

NOVELTY - Single-molecule field effect transistor based on a two-dimensional van der waals heterostructure includes a conductive two-dimensional material gate electrode layer (6), an insulating two-dimensional material dielectric layer (3), a graphene dot electrode-based monomolecular heterojunction (2) and a protective layer (4). USE - Single-molecule field effect transistor based on two-dimensional van-type hetero-structure. ADVANTAGE - The stability of the device is improved. The interference of the external environment to the device is greatly reduced. The precise control preparation of the single-molecule field effect crystal device is realized. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing a single-molecule field effect transistor based on a two-dimensional van der waals heterostructure, which involves adopting van der waals assembly process, in which contacting the material by van der waals force, including performing two-dimensional laminated assembly, where two-dimensional material as each component of the device has atomic level controllable flatness and thickness, stability of van der waals heterostructure, and combination with graphene-based single-molecule. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of three-dimensional structure of a single-molecule field effect transistor based on a two-dimensional van der Waals heterostructure. Graphene electrode (1) Graphene dot electrode-based monomolecular heterojunction (2) Insulating two-dimensional material dielectric layer (3) Protective layer (4) Conductive two-dimensional material gate electrode layer (6)