▎ 摘　　要

NOVELTY - A semiconductor device comprises a gate electrode (12) on a substrate (10), a gate insulating layer (13) on the gate electrode, an interlayer dielectric (ILD) layer (11) between the substrate and the gate electrode and on side portions of the gate electrode and the gate insulating layer, wherein the ILD layer contains a material that has a lower dielectric permittivity than the gate insulating layer, a graphene layer (14) on the gate insulating layer and the ILD layer, and a source (15a) and a drain (15b) on the graphene layer. USE - A semiconductor device e.g. radio frequency device (claimed). ADVANTAGE - The semiconductor device has a structure that reduces or prevents occurrence of parasitic component and exhibits desirable characteristics. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing a semiconductor device with graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device with graphene. Substrate (10) ILD layer (11) Gate electrode (12) Gate insulating layer (13) Graphene layer (14)