▎ 摘　　要

NOVELTY - Manufacture of graphene with nano-pattern involves transferring graphene onto a substrate, transferring an anodized aluminum template having nano-sized pores on graphene, transferring pores of anodized aluminum template to graphene by plasma etching, dissolving in a solvent to remove the anodized aluminum template and activating graphene edge by a heat treatment process. The anodized aluminum template is etched with oxalic acid at 25 degrees C, and then grown with one of sulfuric acid, oxalic acid, and phosphoric acid. The pores of anodized aluminum template transferred to graphene by adjusting the intensity and exposure time of the plasma, but plasma power of 20-50 W, and forming a pattern having a distance of 11 nm between the pores and the pores by exposing the process time for 20-50 seconds in a pressure environment of 50-200 mTorr. The graphene edge is activated by heating at 300 degrees C for 2 hours. USE - Manufacture of graphene with nano-pattern used for semiconductor. ADVANTAGE - The method is economical, and enables manufacture of graphene with nano-pattern having uniform nanopores.