• 专利标题:   Fabricating graphene structures, comprises fabricating a crystalline graphene layer on a surface, and subsequently decreasing crystallographic disorder of crystallographically disordered edges by heating crystalline graphene layer.
  • 专利号:   WO2013062774-A1, US2013108839-A1, KR2014093938-A, US9394177-B2, US2016368773-A1, KR1808334-B1, US10252914-B2
  • 发明人:   ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, UNG K M
  • 专利权人:   WISCONSIN ALUMNI RES FOUND, WISCONSIN ALUMNI RES FOUND
  • 国际专利分类:   B82B001/00, B82B003/00, C01B031/02, B05D003/00, B05D005/00, B32B003/00, C01B031/04, B82Y030/00, B82Y040/00, C23C016/00, C23C016/26, C01B032/182, C01B032/186, C01B032/194
  • 专利详细信息:   WO2013062774-A1 02 May 2013 C01B-031/02 201334 Pages: 20 English
  • 申请详细信息:   WO2013062774-A1 WOUS059668 11 Oct 2012
  • 优先权号:   US282666, KR711497, US184036

▎ 摘  要

NOVELTY - Fabricating graphene structures comprises: fabricating a crystalline graphene layer on a surface, where the crystalline graphene layer has one or more crystallographically disordered edges; and subsequently decreasing the crystallographic disorder of the one or more crystallographically disordered edges by heating the crystalline graphene layer on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules, where the decrease in crystallographic disorder is catalyzed by the surface. USE - The method is useful for fabricating graphene structures (claimed). ADVANTAGE - The method allows efficient fabrication of the graphene structures with smooth and straight edges, high density and improved electronic and/or magnetic properties. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for patterned graphene comprising a graphene layer having features, where the features have internal or external edges that are aligned with the crystallographic direction of the graphene lattice and comprise at least 1000 features.