• 专利标题:   Method for increasing ohm contacting of metal electrode and graphene, involves performing metal ion solution soaking process, and forming surface of metal electrode with insulation substrate using electron beam.
  • 专利号:   CN104851787-A
  • 发明人:   CHEN Z, GE X, XU W, SUI Y, ZHANG H, ZHANG Y, YU G
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   H01L021/28
  • 专利详细信息:   CN104851787-A 19 Aug 2015 H01L-021/28 201570 Pages: 5 Chinese
  • 申请详细信息:   CN104851787-A CN10152563 01 Apr 2015
  • 优先权号:   CN10152563

▎ 摘  要

NOVELTY - The method involves matching metal substrate with a graphene, where the metal substrate is composed of iron, cobalt, nickel, molybdenum and copper. Metal ion solution soaking process is performed, where metal ion solution is composed of silver ion, gold and palladium. A surface of a metal electrode is formed with an insulation substrate using electron beam. Immersion time is about 0.1 to 600 min. USE - Method for increasing ohm contacting of metal electrode and graphene. ADVANTAGE - The method such as CVD enables reducing metal nano-particle defect of graphene, thus improving ohm contacting between metal electrode and graphene in an effective manner. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for increasing ohm contacting of metal electrode and graphene. '(Drawing includes non-English language text)'