▎ 摘　　要

NOVELTY - The method involves forming a substrate between a first graphene layer and a dielectric layer. The first graphene layer is formed with an opening. A conductive material layer is formed with the first graphene layer. A conductive structure is provided with a second part of the dielectric layer. A second graphene layer is formed with a side wall of the conductive structure. The conductive material layer is made up of aluminum and a tungsten material. USE - Method for forming an interconnection structure of an integrated circuit (claimed). ADVANTAGE - The method enables achieving better conductivity of the interconnect structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an interconnection structure. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a method for forming an interconnection structure of an integrated circuit.