▎ 摘　　要

NOVELTY - Varistor junction array device includes a two-dimensional semiconductor formed on a substrate in a direction, and a graphene formed on the semiconductor in another direction. A varistor element is formed at a position, where the two-dimension semiconductor and the graphene are bonded. The two- dimension semiconductor is grown directly on the substrate or on a catalytic metal i.e. electrode, formed in the substrate. A passivation layer is deposited over the graphene. An organic layer is made of polymethyl methacrylate (PMMA), zirconium phosphide (ZEP), styrene-butadiene-styrene (SML), sulfur-8, AR-P1210, AZ5214, and AZ1512. An inorganic layer is formed of aluminum oxide, hafnium oxide, titanium dioxide, zinc oxide, silicon oxide, and silicon nitride. USE - Varistor junction array device. ADVANTAGE - The varistor junction array device comprises a substrate and a two-dimensional semiconductor that is formed on the substrate in a direction, and thus enables reducing the manufacturing cost of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for processing varistor junction array device, which involves: (A) forming a substrate; (B) forming a two-dimensional semiconductor on the substrate in a first direction; and (C) forming graphene in another direction on the two-dimensional semiconductor.