▎ 摘　　要

NOVELTY - Epitaxially growing graphene on silicon carbide substrate comprises (i) adding the silicon carbide substrate on the graphite plate, locating the graphite plate in the crucible and placing the crucible in the heating furnace; (ii) heating the crucible to more than 2000 degrees C using the electron beam for 5-15 minutes to smooth the surface of the silicon carbide substrate; and (iii) controlling the temperature of the heating furnace to be 1300-1600 degrees C to form a graphene layer on the surface of the silicon carbide substrate. USE - The method is useful for epitaxially growing graphene on silicon carbide substrate. ADVANTAGE - The method improves the quality of the formation of the graphene base layer, avoids the problems of lattice defects and serious reduction of surface silicon elements caused by hydrogen etching and improves the growth quality of graphene. DETAILED DESCRIPTION - AN INDEPENDENT CLAIM is also included for: a device for epitaxially growing graphene on silicon carbide substrate.