• 专利标题:   Graphene pair based photonic crystal, has first dielectric layer located between adjacent graphene pairs, and second dielectric layer located between two single-layer graphene, where thickness of first dielectric layer is greater.
  • 专利号:   CN113138432-A, CN214669686-U
  • 发明人:   ZHAO D
  • 专利权人:   UNIV HUBEI SCI TECHNOLGY
  • 国际专利分类:   G02B001/00, G02B005/18
  • 专利详细信息:   CN113138432-A 20 Jul 2021 G02B-001/00 202166 Pages: 9 Chinese
  • 申请详细信息:   CN113138432-A CN10568657 25 May 2021
  • 优先权号:   CN10568657, CN21127974

▎ 摘  要

NOVELTY - The photonic crystal comprises multiple graphene pairs distributed at intervals. Multiple first dielectric layers (B) are located between adjacent graphene pairs. The graphene pairs are provided with two single-layer graphene (G) that are arranged parallel to each other. A second dielectric layer (C) is located between two single-layer graphenes. The thickness of the first dielectric layer is greater than the thickness of the second dielectric layer. The thickness of the first dielectric layer is less than the thickness of the second dielectric layer. USE - Photonic crystal based on graphene pair. ADVANTAGE - The crystal has a high light band resistance filtering function. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a photonic crystal. First dielectric layers (B) Dielectric layer (C) Single-layer graphene (G)