• 专利标题:   Graphene hollow nanosphere unit manufacturing method for manufacturing thin film transistor LCD, involves forming hydrocarbon that is solidified from liquid, and forming graphene material at upper part of micro nano particle.
  • 专利号:   KR2010090551-A
  • 发明人:   KIM J
  • 专利权人:   ABC SANG CO LTD SA
  • 国际专利分类:   B82B003/00
  • 专利详细信息:   KR2010090551-A 16 Aug 2010 B82B-003/00 201064 Pages: 11
  • 申请详细信息:   KR2010090551-A KR009898 06 Feb 2009
  • 优先权号:   KR009898

▎ 摘  要

NOVELTY - The method involves forming hydrocarbon that is cooled and solidified from the liquid, and forming single phase carbene precursor through low temperature pyrolysis reaction of the cooled and solidified hydrocarbon. A graphene base hollow spherical unit is formed by etching the single phase carbene precursor by utilizing aqueous solution and micro nano particle. Graphene material is formed at upper part of the micro nano particle. The hydrocarbon is selected from one of acetone, propanol or isopropyl alcohol. USE - Graphene hollow nanosphere unit manufacturing method for manufacturing a thin film transistor LCD. ADVANTAGE - The method allows manufacturing of a graphene hollow nanosphere unit with excellent chemical property and environment-friendliness. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of a graphene hollow nanosphere unit manufacturing method.'(Drawing includes non-English language text)' Reactor (10) Silica nanoparticle (100) Composite (101) Graphene hollow nanosphere unit (102) Nanosphere unit (103)