• 专利标题:   Manufacture of graphene for e.g. gas sensor, involves heating transition-metal single-crystal thin film formed on monocrystal substrate at epitaxial, and supplying carbon on surface of transition metal.
  • 专利号:   JP2012232860-A
  • 发明人:   FUJII K, SATO M
  • 专利权人:   FUJI ELECTRIC CO LTD
  • 国际专利分类:   C01B031/02
  • 专利详细信息:   JP2012232860-A 29 Nov 2012 C01B-031/02 201280 Pages: 8 Japanese
  • 申请详细信息:   JP2012232860-A JP100765 28 Apr 2011
  • 优先权号:   JP100765

▎ 摘  要

NOVELTY - A transition-metal single-crystal thin film (12) is formed on a monocrystal substrate at the epitaxial. The transition-metal single-crystal thin film is heated, and carbon is supplied on the surface of the transition metal to obtain graphene (10). The monocrystal substrate is mica (100) substrate (13) or yttria-stabilized zirconia (111) substrate. USE - Manufacture of graphene used for gas sensor and spin-injection device. ADVANTAGE - The method provides uniform thin-film graphene having high quality, without domain boundary. DESCRIPTION OF DRAWING(S) - The drawing shows the laminated structure of a graphene/copper (111) thin film/mica substrate. Graphene (10) Transition-metal single-crystal thin film (12) Mica substrate (13)