▎ 摘　　要

NOVELTY - A homogeneous epitaxial high electron mobility transistor (HEMT) device structure comprises, from bottom to top, a substrate, a low-temperature nucleation layer, a graphene layer (A), a buffer layer (A), a recovery layer, a graphene layer (B), a buffer layer (B), a high resistance layer, a channel layer and a barrier layer. USE - The homogeneous epitaxial HEMT device structure is useful for high-voltage and high-power electronic device. ADVANTAGE - The homogeneous epitaxial HEMT device structure: greatly reduces the dislocation density of the material; improves the quality of the crystal lattice, thus improving electron mobility, breakdown voltage, leakage current and other characteristics of the HEMT device; effectively alleviates the thermal mismatch between the sapphire and the gallium nitride layer; increases the utilization rate of the sapphire substrate and the gallium nitride film substrate; and is easy to peel by inserting the graphene layer.