• 专利标题:   Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.
  • 专利号:   US2022270853-A1, KR2022118798-A
  • 发明人:   SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C23C016/30, C23C016/34, C23C016/455, C23C016/458, C23C016/46, C23C016/505, H01J037/32, C23C016/44, C23C016/509
  • 专利详细信息:   US2022270853-A1 25 Aug 2022 H01J-037/32 202271 English
  • 申请详细信息:   US2022270853-A1 US523339 10 Nov 2021
  • 优先权号:   KR022696

▎ 摘  要

NOVELTY - Apparatus (10) comprises a chamber (100), a stage in the chamber, and a dielectric window (120) including a first surface facing the stage and a second surface provided on a side opposite to the first surface. A planar high-frequency antenna is formed on the second surface of the dielectric window. A first gas nozzle is configured to provide a source gas into the chamber, where an alternating current electric signal having a frequency of 1 MHz to 1 GHz is applied to the planar high-frequency antenna. USE - Apparatus for depositing a two-dimensional material. ADVANTAGE - The apparatus increases deposition uniformity, prevents a dielectric window from being contaminated, and form a high-quality deposition film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the apparatus for depositing a two-dimensional material. 10Apparatus 21Vacuum pump 100Chamber 120Dielectric window 130Gas storage