▎ 摘　　要

NOVELTY - Field effect transistor comprises a substrate (12), a passivation layer on the substrate providing a passivated substrate. The passivation layer is inert to XeF2, the passivation layer is on a top, a bottom and sides of the substrate, and a graphene lateral heterostructure field effect transistor (LHFET) on the passivated substrate. USE - Heterostructure FET. ADVANTAGE - The graphene LHFET is easily integrated with complementary metal-oxide semiconductor (CMOS) circuits. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for providing a field effect transistor, which involves: providing a substrate; forming a passivation layer on the substrate to form a passivated substrate, where the passivation layer is inert to XeF2, where the passivation layer is on a top, a bottom and sides of the substrate; and forming a graphene lateral heterostructure field effect transistor (LHFET) on the passivated substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-section of a graphene LHFET fabricated on a Si substrate. 12Substrate 14Source contact 18Gate electrode 20Hetero structure graphene channel 40Dielectric film