▎ 摘　　要

NOVELTY - The resistance memory device has gate electrodes spaced apart from each other on substrate in direction perpendicular to upper surface of the substrate. The insulating patterns are respectively formed between the gate electrodes, and include boron nitride. A pillar structure is extended in the direction on the substrate, and penetrates gate electrodes and the insulating patterns. The pillar structure includes vertical electrode includes graphene. A variable resistance pattern is formed on sidewall of the vertical electrode. USE - Vertical variable resistance memory device. ADVANTAGE - The difficulty of the process of forming the vertical electrode is reduced. The mobility of electrons is improved. The degree of integration of the vertical variable resistance memory device is improved, since the gate electrode formed between the insulating patterns including graphene and boron nitride has a low resistance. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of vertical variable resistance memory device. Substrate (100) First insulating pattern (115) Gate electrodes (125) Interlayer insulating film (130) First contact plug (200)