▎ 摘　　要

NOVELTY - Preparing two-dimensional crystalline thin film layer of palladium diselenide involves using silicon carbide as substrate having graphene layer on the surface of silicon carbide. The temperature of the substrate is maintained within a growth temperature range of selenium and palladium. The selenium atoms and palladium atoms are formed by evaporation of pure selenium and pure palladium in a reaction ratio, and then deposited on a substrate, and the the selenium atoms and palladium atoms are reacted on the substrate to form two-dimensional ordered crystal film layer distributed with selenium atoms and palladium atoms in a superposed state of selenium-palladium-selenium. USE - Method for preparing two-dimensional crystalline thin film layer of palladium diselenide. ADVANTAGE - The method enables to prepare two-dimensional crystalline thin film layer of palladium diselenide, which fully utilizes palladium diselenide to study palladium diselenide and facilitates physical properties in related devices.