• 专利标题:   Doped, at least partially saturated graphene, useful in electronic devices including transistors, and as conductors including microcircuits or bulk conductors.
  • 专利号:   US2011269629-A1
  • 发明人:   GIUSTINO F, FERRARI A C, SAVINI G
  • 专利权人:   ISIS INNOVATION LTD
  • 国际专利分类:   B82Y030/00, C01B031/00, C01B031/36, C07C013/615, C07C025/00, C07F005/02, H01L029/775, H01L039/12
  • 专利详细信息:   US2011269629-A1 03 Nov 2011 H01L-039/12 201175 Pages: 16 English
  • 申请详细信息:   US2011269629-A1 US019779 02 Feb 2011
  • 优先权号:   GB004554

▎ 摘  要

NOVELTY - Doped, at least partially saturated graphene is claimed, where the saturation is by hydrogen or halogen, or by hydrogen and halogen. USE - The graphene is useful in electronic devices including transistors, and as conductors including microcircuits or bulk conductors. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) at least partially saturated graphene at a temperature below its superconducting critical temperature; (2) a doped diamond nano-rod at a temperature below its superconducting critical temperature; (3) a device-I comprising a layer of at least partially saturated graphene, where the saturation is by hydrogen and/or halogen, and a gate layer on it; (4) a device-II comprising a diamond nano-rod, and a gate layer on it; and (5) a substance having a carbon structure in which carbon atoms are bonded together by sp3 bonds, and the carbon structure is low dimensional, exhibiting superconductivity.