▎ 摘　　要

NOVELTY - The detector has a silicon substrate (1) whose surface is coated with a silicon dioxide layer (2) whose surface is tiled with a P-type samarium-doped gallium nitride nanowire (4). N-type graphene (5) is located between two gold electrodes (3). The gold electrode (6) is provided on the N-type graphene as output electrode. The gold electrode (6) is in ohmic contact with the N-type graphene, and is isolated from the samarium doped gallium nitride nanowires and the ohmic electrodes (3). USE - Samarium doped gallium nitride nano-wire based heterojunction photoelectric detector. ADVANTAGE - The responsiveness, high gain and faster response of the heterojunction photodetector are ensured. The cost for preparing heterojunction photoelectric detector is reduced. The detection speed of the detector is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of heterojunction photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the samarium doped gallium nitride nano-wire based heterojunction photoelectric detector. Silicon substrate (1) Silicon dioxide layer (2) Gold electrodes (3,6) P-type samarium-doped gallium nitride nanowire (4) N-type graphene (5)