▎ 摘　　要

NOVELTY - Selective deposition on a dielectric layer, involves providing a semiconductor substrate, where the semiconductor substrate comprises a metal layer formed in a dielectric layer, the metal layer having an exposed metal surface; selectively depositing graphene on the exposed metal surface; and selectively depositing a dielectric material on the dielectric layer. USE - The method is useful for selective deposition on dielectric layer (claimed). ADVANTAGE - The method enables selective deposition of dielectric material on the graphene with high electrical conductivity, high thermal conductivity and good mechanical strength and toughness, optical transparency, and high electron mobility. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a substrate processing apparatus; and (2) a semiconductor device comprising a first dielectric layer; a first metal layer formed in the first dielectric layer; a selective graphene film selectively formed on a top surface of the first metal layer relative to the first dielectric layer; and a selective dielectric layer selectively formed on a top surface of the first dielectric layer relative to the first metal layer.