▎ 摘　　要

NOVELTY - A graphene film is grown on a copper substrate using mixed atmosphere of hydrogen and methane by chemical vapor deposition method. The copper substrate with graphene film is provided on silicon substrate, silicon substrate is provided into ferric nitrate solution, copper substrate is dissolved, and graphene film is deposited on silicon substrate. The solution is diluted, silicon substrate deposited with graphene is taken from the solution, and dried. The silicon substrate is cleaned, placed into annealing furnace protected by argon gas, cooled, and graphene film material is manufactured. USE - Manufacture of graphene film material. ADVANTAGE - The graphene film material is easily and efficiently manufactured with high quality. DETAILED DESCRIPTION - A graphene film is grown on a copper substrate using mixed atmosphere of hydrogen and methane by chemical vapor deposition method. The copper substrate with graphene film is provided on silicon substrate with oxidized surface, the silicon substrate is provided into ferric nitrate solution, copper substrate is dissolved, and graphene film is deposited on the silicon substrate. The solution is diluted, the silicon substrate deposited with graphene is taken from the solution, and dried with vacuum drying tank. The silicon substrate deposited with graphene is ultrasonically cleaned, placed into annealing furnace protected by argon gas, cooled into room temperature with furnace, and graphene film material is manufactured.