• 专利标题:   Producing two-dimensional autonomous nanostructures using system in environment of plasma excited by microwaves, involves injecting mixture of gases and precursors, in drainage regime and reactor and drainage is submitted to electric field.
  • 专利号:   PT117332-A1
  • 发明人:   TATAROVA E S, DUARTE VIEIRA HENRIQUES J P D, CAPITAO LEMOS ALVES L P M, SOARES GONCALVES B M
  • 专利权人:   INST SUPERIOR TECNICO
  • 国际专利分类:   B82Y040/00, C01B032/184, H05H001/46
  • 专利详细信息:   PT117332-A1 06 Aug 2021 B82Y-040/00 202180 Pages: 1
  • 申请详细信息:   PT117332-A1 PT117332 13 May 2016
  • 优先权号:   PT117332

▎ 摘  要

NOVELTY - Producing two-dimensional autonomous nanostructures using system in an environment of plasma excited by microwaves, and injecting a mixture of gasses and precursors, in the drainage regime and reactor. The drainage is submitted to the electric field of a surface wave, excited by the power use microwave that is introduced in a field applicer. The plasms are generated with high density energy, which breakdown the precursors into their constituents atomic and/or molecular. The system comprises plasma reactor with launch zone of surface waves, transient zone with progressive growing cross section area. The reactor of plasma is together with a source of infrared radiation, and provide an adjustment controlled of the space gradients of temperature and speed of output of the gas. The nanostructure samples obtained are two-dimensional and has a single layer thickness atomic. USE - Method for producing two-dimensional autonomous nanostructures using system in an environment of plasma excited by microwaves. ADVANTAGE - The method allows to produce two-dimensional autonomous nanostructures by using system allows to obtain production rates of graphene in the order of one gram per hour and upper.