▎ 摘　　要

NOVELTY - Preparation of low-fold density graphene material involves taking insulating substrate, cleaning, drying, putting into chemical vapor deposition equipment, vacuumizing to less than or equal to 10-4 mbar, turning on the microwave power, heating, removing the gas adsorbed on the surface of insulating substrate, introducing argon gas and hydrogen as carrier gas where flowrate of argon gas is 1-30 L/minute and hydrogen gas flowrate is 1-60 L/minute, introducing gaseous carbon source and reacting. USE - Method for preparing low-fold density graphene material (claimed). ADVANTAGE - The method is simple and low-cost. The product has high quality. DETAILED DESCRIPTION - Preparation of low-fold density graphene material comprises taking insulating substrate, cleaning, drying, putting into chemical vapor deposition equipment, vacuumizing to less than or equal to 10-4 mbar, turning on the microwave power, heating, removing the gas adsorbed on the surface of insulating substrate, introducing argon gas and hydrogen as carrier gas where flowrate of argon gas is 1-30 L/minute and hydrogen gas flowrate is 1-60 L/minute, introducing gaseous carbon source where ratio of gaseous carbon source flow and hydrogen flow is 0.001-50%, introducing gaseous nitrogen source at flowrate of 0.005-2 L/minute and reacting at 500-1800 degrees C with gas pressure of 500-1000 mbar for 1-100 minutes to obtain 1-5 layers of p-type doped graphene.