• 专利标题:   Improving electrical characteristics of graphene device, involves providing graphene device with ferroelectric film on substrate having graphene layer and applying specified voltage on graphene device.
  • 专利号:   KR2012110272-A, KR1262331-B1
  • 发明人:   GANG B S, HUI H B, HYEON A J
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND, GRAPHENE SQUARE INC
  • 国际专利分类:   C01B031/02, H01B001/04, H01B001/06, H01L021/02
  • 专利详细信息:   KR2012110272-A 10 Oct 2012 C01B-031/02 201406 Pages: 9
  • 申请详细信息:   KR2012110272-A KR028025 29 Mar 2011
  • 优先权号:   KR028025

▎ 摘  要

NOVELTY - Method for improving electrical characteristics of graphene device involves providing the graphene device with ferroelectric film on substrate having graphene layer and applying specified voltage on the graphene device. USE - The method is useful for improving electrical characteristics of graphene device (claimed). ADVANTAGE - The method enables the device to utilize transparent electrode as it has reduced surface resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for grapheme device having improved electrical characteristics, which is obtained by the above-mentioned method.