▎ 摘　　要

NOVELTY - The method involves providing (1) a silicon substrate and forming a layer of a metal nickel layer on the silicon substrate. A layer of graphene layer is deposited (2) on the metal nickel layer by chemical vapor deposition process. The graphene layer is etched by plasma etching to form a patterned graphene layer. The metal nickel layer is dissolved (3) on the silicon substrate, so as to make the patterned graphene layer separated from the silicon substrate. The patterned graphene layer is transferred to obtain an electrode layer of a thin film transistor (TFT) substrate. USE - Method for manufacturing an electrode layer in a TFT substrate. ADVANTAGE - The electrode layer with graphene material has excellent conductivity and mechanical properties, and has good thermal stability and chemical stability. The manufacturing process realizes the fabrication of an electrode layer suitable for bending the flexible display device. The electrode layer of the TFT substrate to form the gate electrode layer can effectively improve the technical problem that the flexible display device is prone to transcrystalline fracture and increase the resistance during the bending process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing of a flexible TFT substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for manufacturing an electrode layer in a TFT substrate. (Drawing includes non-English language text) Step for providing a silicon substrate and forming a layer of a metal nickel layer on the silicon substrate (1) Step for depositing a layer of graphene layer on the metal nickel layer by chemical vapor deposition process (2) Step for dissolving the metal nickel layer on the silicon substrate (3)