▎ 摘　　要

NOVELTY - A surface of a silicon-carbide substrate is coated with tantalum-carbide graphite base, and placed in a system and heated at 1570 degrees C. The hydrogen is flown to reaction chamber, and silicon-carbide-substrate surface is processed. The system is subjected to carbonization temperature at 1580-1650 degrees C, with argon flow of 15 L/minute. The supply of argon is stopped. The reaction-chamber temperature is lowered to room temperature, to obtain layer of graphene film on silicon-carbide substrate. USE - Manufacture of layer of graphene film on silicon-carbide substrate (claimed). ADVANTAGE - The method enables efficient manufacture of graphene film on silicon-carbide substrate. The sublimation of silicon atoms in silicon-carbide substrate during heating and cooling processes is effectively prevented. The carbonization process is easily controlled. DETAILED DESCRIPTION - A surface of a silicon-carbide substrate is coated with tantalum-carbide graphite base, and placed in a system and heated at 1570 degrees C and reaction chamber pressure of 100 mbar. The hydrogen is flown at rate of 80 L/minute to reaction chamber under atmosphere of argon gas flow of 3 L/minute and silicon-carbide-substrate surface is processed. The surface damage is removed, and micro-level is formed on surface of silicon-carbide substrate. The reaction-chamber temperature is reduced to 1200 degrees C or less. The hydrogen is flown at rate of 0-80 L/minute, and argon gas is flown at rate of 3 L/minute. The reaction-chamber pressure is 100 mbar. The argon gas if further flown at rate of 3-15 L/minute, and mechanical vacuum pump controls the reaction chamber and reaction-chamber pressure is increased to 200 mbar or more. The system is subjected to carbonization temperature at 1580-1650 degrees C and pressure of 200 mbar, with argon flow of 15 L/minute. The argon gas flow is reduced to 0 L/minute. The mechanical pump further controls the reaction chamber to 0-1 mbar. The mechanical pump is closed. The reaction-chamber pressure is controlled to 10-4-10-1 mbar using molecular vacuum pump. The carbonization process is further carried out for 15-60 minutes. The heating is stopped, and argon gas is introduced to reaction chamber at rate of 0-10 L/minute and pressure of 0-200 mbar. The reaction chamber temperature is 1000 degrees C. The supply of argon is stopped. The reaction-chamber temperature is lowered to room temperature, to obtain layer of graphene film on silicon-carbide substrate.