▎ 摘　　要

NOVELTY - Preparation (M1) of bilayer graphene domain, comprises (a) dissolving decaborane into phenyl methyl ether to prepare a decaborane/phenyl methyl ether solution, (b) coating the decaborane/phenyl methyl ether solution to a cleaned metal foil/film layer, (c) putting a copper foil coated with decaborane/phenyl methyl ether into a reaction cavity of chemical vapor deposition (CVD) equipment, performing vacuum pumping at the backing until pressure is 7x10-1 Pa, heating up to 1000-1100 degrees C and maintaining at that temperature for 5-10 minutes under protection of inert gas, keeping the flow rate of inert gas unchanged, introducing hydrogen gas and diluted methane, and performing bilayer graphene domain growth in an environment at a temperature of 1000-1100 degrees C, and (d) cooling to room temperature in case of keeping flow rate of the diluted methane, inert gas and hydrogen gas unchanged after growth, thus obtaining the bilayer graphene domain. USE - The method is useful for preparing bilayer graphene domain that is useful for manufacturing microelectronics and optoelectronic devices (all claimed). ADVANTAGE - The method: provides the bilayer graphene domain which is consistent in size of upper and lower layers; solves uncontrollable layer number of the original hand-tearing graphene film; is simple and is compatible with an existing graphene preparation method; is controllable in domain size; free of complex treatment on a substrate; and can be widely applied to the fields of low-temperature superconducting test, low-dimensional quantum Hall effect research and the like of magic-angle graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a bilayer graphene domain prepared by the method (M1) as above per se.