• 专利标题:   Graphene structure used in high power pulse magnetron sputtering preparation, has upper layer that is provided with amorphous carbon film and lower layer that is provided with multilayer graphene film.
  • 专利号:   CN102774065-A, CN102774065-B
  • 发明人:   KE P, WANG A, ZHANG X
  • 专利权人:   CHINESE ACAD SCI NINGBO INST MATERIAL TE, CHINESE ACAD SCI NINGBO MATERIAL TECHNO
  • 国际专利分类:   B32B009/04, C23C014/06, C23C014/35
  • 专利详细信息:   CN102774065-A 14 Nov 2012 B32B-009/04 201319 Pages: 13 Chinese
  • 申请详细信息:   CN102774065-A CN10184049 01 Jun 2012
  • 优先权号:   CN10184049

▎ 摘  要

NOVELTY - The graphene structure has an upper layer that is provided with an amorphous carbon film and a lower layer that is provided with a multilayer graphene film. The thickness of the multilayer graphene film is 0.5-10 nm. The amorphous carbon and multilayer graphene films are formed on a substrate made of silicon or glass. USE - Graphene structure used in high power pulse magnetron sputtering preparation. ADVANTAGE - Environment-friendly graphene can be attained effectively. The requirement of catalyst for preparing the graphene structure can be avoided so that the cost required for the graphene structure preparation can be reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the preparation method of graphene structure. DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view illustrating the preparation method of graphene structure.